发明名称 |
Semiconductor Device Structures and Methods of Fabricating Semiconductor Device Structures for Use in SRAM Devices |
摘要 |
Semiconductor device structures and methods of fabricating such semiconductor device structures for use in static random access memory (SRAM) devices. The semiconductor device structure comprises a dielectric region disposed between first and second semiconductor regions and a gate conductor structure extending between the first and second semiconductor regions. The gate conductor structure has a first sidewall overlying the first semiconductor region. The device structure further comprises an electrically connective bridge extending across the first semiconductor region. The electrically connective bridge has a portion that electrically connects a impurity-doped region in the first semiconductor region with the first sidewall of the gate conductor structure.
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申请公布号 |
US2008251934(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20070734931 |
申请日期 |
2007.04.13 |
申请人 |
MANDELMAN JACK ALLAN;YANG HAINING |
发明人 |
MANDELMAN JACK ALLAN;YANG HAINING |
分类号 |
H01L29/267;H01L21/3205 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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