An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.
申请公布号
WO2008122575(A1)
申请公布日期
2008.10.16
申请号
WO2008EP54040
申请日期
2008.04.03
申请人
CAMBRIDGE DISPLAY TECHNOLOGY LTD;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD;HOTTA, SADAYOSHI;BURROUGHES, JEREMY, HENLEY;WHITING, GREGORY, LEWIS
发明人
HOTTA, SADAYOSHI;BURROUGHES, JEREMY, HENLEY;WHITING, GREGORY, LEWIS