| 摘要 |
PURPOSE:To prevent stepwise cut of an electrode and to reduce a stray capacity by forming an element in a recess formed on a semi-insulating semiconductor substrate by epitaxial growth, thereby forming a beam lead on a flat surface. CONSTITUTION:The surface of a semi-insulating GaAs substrate 1 is selectively etched to form a recess, a n<+> type GaAs layer 2 having high concentration impurity and a n<-> type GaAs layer 3 having low concentration impurity are sequentially subjected to epitaxial growth in the recess to fill the recess, and the surface of the substrate and the surface of the layer 3 are made coincident. Then, a silicon oxide film 3 is formed on the whole surface, and an Au-Ge layer is provided on the surface of the layer 2 of a first opening formed by selectively and sequentially etching the film 4 and the layer 3 to form an ohmic contact 5. Thereafter, a Ti layer is provided on the surface of the layer 3 of a second opening formed by selectively etching the film 4 to form a Schottky junction 6. Then, an anode beam lead 8 and a cathode beam lead 7 are formed on the flat film 4. |
