发明名称 |
METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE |
摘要 |
Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
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申请公布号 |
US2008254631(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20070680709 |
申请日期 |
2007.03.01 |
申请人 |
SHIMAYAMA TSUTOMU;KAMESHIMA TAKATOSHI;OKAMOTO MASAKI |
发明人 |
SHIMAYAMA TSUTOMU;KAMESHIMA TAKATOSHI;OKAMOTO MASAKI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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