| 摘要 |
PROBLEM TO BE SOLVED: To provide a termination structure of a Schottky electrode by which a stable breakdown voltage is realized. SOLUTION: The semiconductor device has a semiconductor substrate 1 of a first conductivity type, a semiconductor layer 2 of a first conductivity type which is formed on the semiconductor substrate 1 and has an active region and an element termination region surrounding it, a first electrode 7 which is formed on the surface of the active region of the semiconductor layer 2 and forms a Schottky barrier against the semiconductor layer 2, a second electrode 10 which is formed on the backside of the semiconductor substrate 1, a first semiconductor region 3 of a second conductivity type which is formed from the end of the active region toward the element termination region, a second semiconductor region 4 of a second conductivity type which is formed under the end of the first electrode 7 on the inner surface of the first semiconductor region on the surface of the semiconductor layer 2 and a third electrode 11 which is electrically connected with the first electrode 7 on the second semiconductor region 4 and formed separately from the active region, and formed of a material different from that of the first electrode 7. COPYRIGHT: (C)2009,JPO&INPIT |
