| 摘要 |
PROBLEM TO BE SOLVED: To prevent a leak path from being generated due to wet etching at a planned interconnection formation location by a manufacturing method for a semiconductor device like a GaAs field-effect transistor. SOLUTION: The manufacturing method for a semiconductor device includes forming an electrode and an interconnection connected to the electrode by the same deposition step when manufacturing a GaAs field-effect transistor on a GaAs substrate 21, wherein an SiOx film 25A is formed on a GaAs substrate, an SiN film is formed on the SiOx film, a primary resist 31 having a primary aperture is formed in a planned electrode formation location, the SiN film is removed by RIE at the primary aperture as well as removing the SiOx film up to a predetermined film thickness, the primary resist is removed, a secondary resist 34 having a secondary aperture is formed in a region including the planned electrode formation location and a planned interconnection formation location, the SiOx film with a predetermined film thickness is removed by the wet etching, and a metal film is formed in the planned electrode formation location and in the planned interconnection formation location. COPYRIGHT: (C)2009,JPO&INPIT
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