Fabrication process for silicon-on-insulator field effect transistors using high temperature nitrogen annealing

摘要

Disclosed is a method of fabricating a silicon-on-insulator (SOI) device that enables high device densities and mitigates variances in carrier mobility and saturation drain current (Id_sat). The fabrication method incorporates one or more high temperature nitrogen anneal processes. The high temperature nitrogen anneal nitridizes the interfaces between the n-well and p-well silicon islands and the buried oxide layer. The high temperature nitrogen anneal also nitridizes the interfaces between the n-well and p-well silicon islands and the shallow trench isolation structure. The presence of diffused nitrogen at these interfaces substantially prevents compressive stresses on the n-well and p-well silicon islands, and substantially prevents upward bending of the n-well and p-well silicon islands, which cause variances in carrier mobility and Id_sat.