发明名称 |
Improved gap-fill despositions in the formation of silicon containing dielectric materials |
摘要 |
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.
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申请公布号 |
EP1980646(A1) |
申请公布日期 |
2008.10.15 |
申请号 |
EP20080152696 |
申请日期 |
2008.03.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
INGLE, NITIN K.;BHATIA, SIDHARTH;BANG, WON B.;YUAN, ZHENG;YIEH, ELLIE;VENKATRAMAN, SHANKAR |
分类号 |
C23C16/04;H01L21/762 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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