METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICES

摘要

A method for forming fine patterns of a semiconductor device is provided to store energy in a photoresist layer even if smaller energy is projected than threshold energy, thereby obtaining the desired fine patterns. A method for forming fine patterns of a semiconductor device comprises the steps of: forming a photoresist layer having threshold energy on a semiconductor substrate(101), the threshold energy corresponding to minimum exposure energy to react to the photoresist layer chemically; projecting a first light having a first energy which is lower than the threshold energy to a first region of the photoresist layer to form a preliminary exposure region maintaining the first energy, the preliminary exposure region limiting a non-exposure region; projecting a second light having a second energy which is lower than the threshold energy to a second region in the preliminary exposure region and to the non-exposure region to convert the second region into an exposure region, the sum of the first and second energies the same and higher as/than the threshold energy; and removing the exposure region selectively to form photoresist patterns(110).