发明名称 MRAM arrays and methods for writing and reading magnetic memory devices
摘要 A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
申请公布号 US7436698(B2) 申请公布日期 2008.10.14
申请号 US20060610739 申请日期 2006.12.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN WEN-CHIN;TANG DENNY;LAI LI-SHYUE;WANG CHAO-HSIUNG;LAI FAN-SHI JORDAN
分类号 G11C11/00;G11C11/16 主分类号 G11C11/00
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