| 摘要 |
PROBLEM TO BE SOLVED: To perform high-speed data transfer by fully utilizing a burst property of collection memory in collecting fail data of DUT by memory tester. SOLUTION: A semiconductor test device 100 determines pass/fail by applying a test signal from a data generator 12 to a DUT 40 and comparing the output signal and an expected value at a comparator 51, and improves testing efficiency by performing burst transfer of the fail data obtained at this time to a collection memory 18. Although an address generator 13 generates addresses in accessing the DUT 40 at random seeing form a physical configuration, burst transfer of the fail data can be achieved by fully utilizing the burst property, since this address data is changed into an incremental sequence in address translation section 52. COPYRIGHT: (C)2009,JPO&INPIT
|
