NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to prevent a memory cell adjacent to a selection transistor from having different characteristics from another memory cell. A memory cell column is formed by connecting a plurality of memory cells in series. Each memory cell includes a structure where a charge storage layer and a control gate are stacked through an insulation layer on a semiconductor substrate(11). A first selection transistor(ST1) is formed on the semiconductor substrate and is connected between one end of the memory cell column and a common source line. A second selection transistor is formed on the semiconductor substrate and is connected between the other end of the memory cell column and a bit line.