发明名称 ELECTRONIC DEVICE WITH IMPROVED OHMIC CONTACT
摘要 The invention relates to an electronic device successively comprising from its base to its surface: - a support layer (1), - a channel layer (3) to contain an electron gas, - a barrier layer (4) - at least one ohmic contact electrode (5) formed by a superposition of metallic layers a first layer of which is in contact with the barrier layer (4). The device is remarkable in that the barrier layer (4) presents a region called contact region (10), under the ohmic contact electrode(s) (5), which region comprises at least one metal selected from the metals forming said superposition of metallic layers, and in that a local alloying (12) binds the contact region (10) and the first layer of the electrode (5).
申请公布号 WO2008120094(A2) 申请公布日期 2008.10.09
申请号 WO2008IB00788 申请日期 2008.03.25
申请人 PICOGIGA INTERNATIONAL;LAHRECHE, HACENE 发明人 LAHRECHE, HACENE
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