| 摘要 |
Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays. |
