| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be minimized by suppressing the depletion of polycrystalline silicon, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device comprises a control gate electrode, having a first layer made of polycrystalline silicon, the first layer is formed by etching back a first film of polycrystalline silicon containing impurity to reduce the thickness of the film, and the first layer holds an impurity activity ratio in the first film. The method of manufacturing the semiconductor device comprises steps of forming the first film, made of polycrystalline silicon containing impurity, by thermally treating an amorphous silicon film provided on an insulating film and reducing the thickness of the first film by etching back the first film. COPYRIGHT: (C)2009,JPO&INPIT
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