| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to suppress gate leaning by removing residues, occurring in forming a gate stack, through a pretreatment procedure using cleaning and oxygen plasma. A method for manufacturing a semiconductor device comprises the following steps of: forming a gate stack on a semiconductor substrate; cleaning the gate stack by using cleaning solution containing ozone; pre-treating the cleaned gate stack by using oxygen plasma; and annealing the pre-treated gate stack. A tunneling layer, a charge trap layer, a blocking layer and a gate electrode are stacked on the semiconductor substrate. The step of cleaning the gate stack comprises the following processes of: firstly cleaning the gate stack by using ozone solution; secondly cleaning the firstly cleaned gate stack by using BOE(Buffered Oxide Etchant) solution; and thirdly cleaning the gate stack by using cleaning solution containing ammonia.</p> |
