| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition to be used for ArF excimer laser lithography or the like and suitable for a thermal flow process, and to provide a method for forming a resist pattern. <P>SOLUTION: The positive resist composition contains a resin component (A) which increases solubility to an alkali developer by an effect of an acid, an acid generator component (B) generating an acid by exposure, and a compound (G) expressed by a general formula (I). <P>COPYRIGHT: (C)2009,JPO&INPIT |
