发明名称 |
HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE |
摘要 |
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
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申请公布号 |
US2008246100(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20080117274 |
申请日期 |
2008.05.08 |
申请人 |
INFINEON TECHNOLOGIES AG: |
发明人 |
LEE KIL-HO;LIM CHAN |
分类号 |
H01L29/78;B05D5/12;H01L21/28;H01L29/02;H01L29/51;H05H1/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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