| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a plated electrode from peeling from a semiconductor substrate surface by stress concentrated on an outer rim of the plated electrode by a bond in a semiconductor device having the plated electrode formed on the semiconductor substrate surface and a heat sink provided on the electrode via the bond. <P>SOLUTION: A contact of an inner surface 13a of a protective film 13 with the bond 50 is defined as A, and a distance from the contact A to a side face 32 opposite to the inner surface 13a of the film 13 in a protrusion 31 is defined as (a). In addition, where a position farthest from the surface of the plated electrode 12 in a region where the protrusion 31 is in contact with the bond 50 is defined as B and a distance from the surface of the electrode 12 to the position B is defined as b, positions of a semiconductor chip 10 and the protrusion 31 of an upper heat sink 30 are specified so that the distances (a) and b satisfy 0.4<(b/a)<1.8. <P>COPYRIGHT: (C)2009,JPO&INPIT |
