发明名称 PREPARATION OF SILICON CARBIDE WHISKER
摘要 PURPOSE:To prepare the titled whisker having high reinforcing effect and long fiber length by growing SiC whisker by introducing a gas contg. gaseous silane compd. and hydrocarbon gas into a specified zone, and elevating the reaction temp. further. CONSTITUTION:A base material (e.g. a pipe made of alumina) incorporated with a transition metal or a compd. (e.g. NiO) contg. the transition metal is placed for generating SiC whisker in an area for generating SiC whisker of an electric tubular furnace at 1,300-1,600 deg.C. Reducing or inactive gas (e.g. H2) contg. 0.5-50vol% gaseous silane compd. (e.g. silane) and a gaseous hydrocarbon compd. (e.g. methane) introduced into the region for growing the single crystal, heated at 1,300-1,450 deg.C for 30min-8hr to generate SiC whisker having a specified length; the temp. is furthr elevated with 0.1-1 deg.C/min temp. elevating rate upto at highest 1,600 deg.C with 30-300 deg.C temp. range. Finally, the gas is exchanged with inert gas, the furnace is cooled and the titled whisker is obtd.
申请公布号 JPS6140899(A) 申请公布日期 1986.02.27
申请号 JP19840161566 申请日期 1984.08.02
申请人 ASAHI CHEM IND CO LTD 发明人 SHIMOTOI YUTAKA;KAYA TATSUYOSHI
分类号 C30B29/62;C30B25/00 主分类号 C30B29/62
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