| 摘要 |
A high frequency power device ( 100 ) is described comprising a high frequency power transistor ( 102 ) having a first main electrode, a second main electrode acting as output electrode and a control electrode, and an output compensation circuit ( 104 ) for compensating parasitic output capacitance of the transistor ( 102 ). The output compensation circuit is physically positioned relative to the transistor such that a shorter bond wire between the output electrode of the transistor and an output lead of the high frequency power device is obtained. The output compensation circuit ( 104 ) therefore is physically located in between an input lead ( 108 ) of the high frequency power device ( 100 ) and the transistor ( 102 ). The inductance introduced by the bond wire Lcomp from the output compensation circuit ( 104 ) to the output electrode of the transistor ( 102 ) can be used as a feedback signal. Selection of the mutual inductive coupling between the bond wire LcOmP and a bond wire connected to the pre-matching circuit ( 106 ) allows to further optimize the properties of the high frequency power device.
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