发明名称 SHIELD CONDUCTOR LAYER CUTTING METHOD AND LASER TREATMENT DEVICE
摘要 <p>Provided are a shield conductor cutting method and a laser treatment device capable of sufficiently assuring insulation between an internal conductor and a shield conductor layer without leaving a shield line not cut on the shield conductor layer side. The shield conductor layer cutting method includes: a step of preparing a shield cable (1) having a center conductor, an internal insulator arranged to cover the center core, and a shield conductor arranged to cover the internal insulator; and a step of applying a laser beam (12) to the shield conductor layer from at least three directions substantially vertical to the longitudinal direction of the shield cable (1). The angle defined by the two adjacent optical axes of the laser beam applied to the shield conductor layer is less than 180 degrees.</p>
申请公布号 KR20080091168(A) 申请公布日期 2008.10.09
申请号 KR20087018529 申请日期 2007.02.26
申请人 PHOETON CORP. 发明人 MIYAKOSHI ATSUSHI;KURATA TADASHI
分类号 B23K26/38;B23K26/00;B23K26/04;H02G1/12 主分类号 B23K26/38
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