发明名称 PHOTOMASK AND THE METHOD FOR FABRICATING THE SAME
摘要 <p>A photo mask and a method for forming the same are provided to improve a region whose focus depth is weak on a photo mask by efficiently forming a pattern in a region where a phase shift mask is effective and a region where a binary mask is effective. A photo mask includes a transparent substrate(200), a first selection gate line mask pattern, a second selection gate line mask pattern, a second word line mask pattern(230) and a first word line mask pattern(228). A first region and a second region are defined on the transparent substrate. The first selection gate line mask pattern is formed on the first region of the transparent substrate. The second selection gate line mask pattern is spaced apart from the first selection gate line mask pattern by a first distance. The second word line mask pattern is formed on the first region of the transparent substrate to be spaced apart from the first and second selection gate line mask patterns by a second distance. The first word line mask pattern is formed on the second region of the transparent substrate as being spaced apart from the second word line mask pattern by the second distance.</p>
申请公布号 KR20080090797(A) 申请公布日期 2008.10.09
申请号 KR20070034111 申请日期 2007.04.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHANG, DONG SOOK
分类号 H01L21/027 主分类号 H01L21/027
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