发明名称 Method for processing semiconductor wafer, for manufacturing semiconductor wafer with revised edge geometry, involves carrying out material removing process of edge of semiconductor wafer
摘要 <p>The method involves carrying out a material removing process of an edge of a semiconductor wafer in connection by a step for processing a side of the semiconductor wafer. A side of the semiconductor wafer is provided with a protective layer before the material removing process of its edge. The material removing process of the edge of the semiconductor wafer take place with the target reduction of a diameter of the semiconductor wafer.</p>
申请公布号 DE102007021729(B3) 申请公布日期 2008.10.09
申请号 DE20071021729 申请日期 2007.05.09
申请人 SILTRONIC AG 发明人 SCHAUER, REINHARD;SCHWALB, GEORG;WEBER, CHRISTOF;SCHMOLKE, RUEDIGER;VETTERHOEFER, JUERGEN
分类号 H01L21/302;H01L21/304 主分类号 H01L21/302
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