发明名称 |
Method for processing semiconductor wafer, for manufacturing semiconductor wafer with revised edge geometry, involves carrying out material removing process of edge of semiconductor wafer |
摘要 |
<p>The method involves carrying out a material removing process of an edge of a semiconductor wafer in connection by a step for processing a side of the semiconductor wafer. A side of the semiconductor wafer is provided with a protective layer before the material removing process of its edge. The material removing process of the edge of the semiconductor wafer take place with the target reduction of a diameter of the semiconductor wafer.</p> |
申请公布号 |
DE102007021729(B3) |
申请公布日期 |
2008.10.09 |
申请号 |
DE20071021729 |
申请日期 |
2007.05.09 |
申请人 |
SILTRONIC AG |
发明人 |
SCHAUER, REINHARD;SCHWALB, GEORG;WEBER, CHRISTOF;SCHMOLKE, RUEDIGER;VETTERHOEFER, JUERGEN |
分类号 |
H01L21/302;H01L21/304 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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