| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode which does not decrease bonding strength to a nitride gallium layer while exhibiting high reflectivity. <P>SOLUTION: The group III nitride-based compound semiconductor light-emitting element 100 has a sapphire substrate 10, an n-type GaN layer 11, an n-type AlGaN layer 12, a light-emitting layer 13 of GaN/InGaN multiple quantum well structure, a p-type AlGaN layer 14, a p-type GaN layer 15, and a p<SP>+</SP>-type GaN layer 16. A translucent electrode 21 of an ITO is formed on the substantially whole surface of the p<SP>+</SP>-type GaN layer 16, and a pad electrode 22 of gold is formed on a part of the translucent electrode 21. An n-electrode 30 composed of a Ti layer 31 and an Al layer 32 is formed on the n-type GaN layer 11. The group III nitride-based compound semiconductor light-emitting element 100 is a face-up type LED where the n-electrode 30 is a light-reflecting electrode layer and takes out light passing through the translucent electrode 21. The Ti layer 31 has a thickness of smaller than 1 nm and light absorption does not take place in the Ti layer 31. <P>COPYRIGHT: (C)2009,JPO&INPIT |
