| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a through electrode with a structure allowing a trench with a uniform depth to be formed and a through conductive film to be formed that minimizes the film thickness growth rate in a manufacture of a through electrode used for a 3D structure for laminating chips. <P>SOLUTION: Through electrodes G<SB>3</SB>and G<SB>4</SB>penetrate semiconductor substrates 11 and 21, are insulated and isolated from those semiconductor substrates, and have internal through electrodes 12 and 22, ring-shaped semiconductors 11a and 21a, and peripheral through electrodes 14 and 24. The internal through electrodes have multiple columnar semiconductors 11d and 21d and internal through conductive films 12a and 22a, wherein the columnar semiconductors are constructed by using two kinds or more of either a quadrangular or polygonal cross-sectional shape, and are arranged at even intervals relative to the ring-shaped semiconductors and the adjacent columnar semiconductors, and internal through conductive films are filled between the ring-shaped semiconductors and the columnar semiconductors. <P>COPYRIGHT: (C)2009,JPO&INPIT |
