| 摘要 |
<P>PROBLEM TO BE SOLVED: To consistently perform a plurality of processes of a multilayer resist structure in the same chamber without carrying out a substrate to be processed in a forming process of a Via or a Trench of the multilayer resist structure constituted of ArF resist, an inorganic film interlayer, an organic film lower layer resist, a silicon oxide film and an inorganic film, which are arranged on a Si substrate. <P>SOLUTION: In Via etching processing, the organic film lower layer resist is processed without using CF system gas and without applying high-frequency bias to a gas supply board formed of a Si member from a second high-frequency power supply. The silicon oxide film and the inorganic film are processed by making high-frequency bias power from 200 W to 300 W by using CF system gas. In Trench etching processing, the organic film lower layer resist is processed without using CF system gas and without applying high-frequency bias to the gas supply board 8 formed of the Si member from the second high-frequency power supply 5. The silicon oxide film and the inorganic film are processed by using CF system gas and without applying high-frequency bias. <P>COPYRIGHT: (C)2009,JPO&INPIT |
