| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal CVD method and a thermal CVD device by which a film can uniformly be formed up to the peripheral edge of a wafer. SOLUTION: In the thermal CVD method, an inner part of a reaction chamber 11 for forming the film on the wafer (w) is controlled to prescribed pressure. Reactant gas is introduced from above into the reaction chamber 11 controlled to the prescribed pressure. The adiabatic expansion of reactant gas is performed in a shower head 17. Thus, the film is formed by accelerating a gas stream of reactant gas and supplying a gas stream of the accelerated reactant gas to the wafer (w) that is heated while it is rotated. COPYRIGHT: (C)2009,JPO&INPIT
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