发明名称 |
SEMICONDUCTOR STORAGE UNIT, PROCESS FOR MANUFACTURING THE SAME, AND METHOD OF FORMING PACKAGE RESIN |
摘要 |
<p>A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided superior to the ferroelectric capacitor layer, and a passivation film. Further, at least one layer of barrier film capable of inhibiting penetration of moisture and hydrogen into the underlayer is provided between the ferroelectric capacitor layer and the passivation film, and the passivation film is characterized by containing a novolac resin.</p> |
申请公布号 |
WO2008120286(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
WO2007JP53666 |
申请日期 |
2007.02.27 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED;NAGAI, KOUICHI |
发明人 |
NAGAI, KOUICHI |
分类号 |
H01L21/8246;H01L21/312;H01L21/56;H01L27/105 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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