| 摘要 |
A semiconductor laser diode is provided to improve the characteristics of a device, by preventing the crack generated along the interface between an active layer and an electron blocking layer, by forming a graded interlayer between the active layer and the electron blocking layer. An n-contact layer, an n-clad layer, an n-wave guide layer, an active layer, a graded interlayer, an electron blocking layer and a p-waveguide layer are stacked on the top of a substrate. A part of the n-contact layer is revealed by mesa-etching from the p-waveguide layer to a part of the n-contact layer. A p-clad layer is formed on the p-wave guide layer, and a p-contact layer is formed on the projected p-clad layer to form a ridge. A passivation layer is formed on the side of the ridge and the top of the p-clad layer. A p-pad electrode is formed to surround the p-contact layer and a part of the passivation film. An n-pad electrode is formed on the top of the revealed n-contact layer. |
