| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a required arbitrary breakdown voltage can be obtained and the reliability of an embedded oxide film can be improved. SOLUTION: In the semiconductor device, n pieces of transistor elements and resistance elements that are insulation-separated from each other are each serially connected between two different potentials, with a gate of a first stage transistor element being an input terminal. The gates of transistor elements of each stage, excluding the first stage transistor element, are sequentially connected to partial pressure points between resistance elements, and an output is extracted from a terminal on a potential side of an n-th stage transistor element. Moreover, each field region that is constituted to contain one transistor element and a field region of a lower stage is polarized at the same potential as the gate of the transistor element disposed in the field region. An area of a support substrate corresponding to the field region is divided into a plurality of separated regions that are mutually insulation-separated, and each separated region is capacity-coupled to an opposite field region. COPYRIGHT: (C)2009,JPO&INPIT
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