| 摘要 |
PROBLEM TO BE SOLVED: To provide a PIN diode that is suitable to small capacity and can stabilize characteristics, as well as its manufacturing method. SOLUTION: The method is used to manufacture a semiconductor device that includes a PIN junction part with an I-type semiconductor layer formed on the main surface of a semiconductor substrate and is provided with a PIN junction side wall having a flat face where a part corresponding to the I-type semiconductor layer is vertical to the main surface thereof. The method includes first to fourth steps for forming the PIN junction side wall. In the first step, a silicon oxide film is formed in a wafer having a semiconductor layer constituting the PIN junction part. In the second step, a mask formed of a photo resist film forming the PIN junction side wall is formed on the silicon oxide film. In the third step, the mask is used to etch the silicon oxide film and the main surface of a semiconductor thereunder. In the fourth step, the photo resist film is removed, and while the silicon oxide film is used as a mask, the main surface of the semiconductor is etched together with the I-type semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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