Magnetically sensitive metal semiconductor devices

摘要

Metal junction contact diode and transistor configurations that exhibit high magnetic sensitivity are described. Implanted emitters that have a perimeter area giving rise to unwanted components of minority carrier injection are eliminated in the junction which is limited to a uniplanar contact. Metal semiconductor junctions formed on P-type silicon have been discovered to be superior injectors for minority carriers when hafnium, zirconium, or zinc metal are used to form a silicide layer that forms a reliable emitter. Extreme high frequency capability linear response exist for these devices. They are operative between 0 hertz and 10 gigahertz.