| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for improving the stability in a resistance change and a resistance change ratio of a resistance change type memory element. <P>SOLUTION: A substrate 11 is carried into an oxide chamber F3, a first target with titanium as a main constituent is sputtered under an oxygen atmosphere to form an oxide layer made of a titanium oxide, the substrate 11 having the oxide layer is carried into an irradiation chamber F4, and the surface of the oxide layer is further irradiated with an oxygen radical to form a variable resistor. <P>COPYRIGHT: (C)2009,JPO&INPIT |
