| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pillar phase change memory cell that allows conditions, in which the pillar cell of a phase change memory becomes structurally unstable due to uneven etching, to be controlled. <P>SOLUTION: A memory cell includes a first electrode 202, a storage location 204, and a second electrode 206. The storage location includes a phase change material, and is in contact with the first electrode. The storage location has a first cross-sectional width. The second electrode is in contact with the storage location, and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode constitute a pillar phase change memory cell. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
