发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of immediately investigating the cause of fault. SOLUTION: When the ambient temperature of a diode 4 is raised to a predetermined temperature which exceeds a rated upper limit temperature, for example, voltage between the anode and the cathode of the diode 4 is lowered whereby the voltage of positive input terminal of a comparator 3 is lowered than the voltage of a negative input terminal. Then, a voltage which exceeds a blown-out threshold voltage is applied on both ends of a blown-out resistance element 7. Then, the blown-out resistance element 7 is cut and fracture mark remains in the semiconductor integrated circuit device 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008235540(A) 申请公布日期 2008.10.02
申请号 JP20070072533 申请日期 2007.03.20
申请人 DENSO CORP 发明人 TOBITAKA KOMEI
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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