| 摘要 |
PURPOSE:To reduce software errors in a semiconductor memory by recombining electrons and holes generated in a semiconductor region of one electrode of a capacity element. CONSTITUTION:An n<+> type semiconductor region 6 is so provided under an n<-> type semiconductor region 5 that electrons (e) and holes (h) generated in semiconductor regions 5, 6 are recombined in the semiconductor regions 5, 6. The energy level Ev of valence band is so bent as to disturb feeding of the holes (h) into a semiconductor substrate 1 between the regions 5 and 6, and the energy level Ec of conduction band is so bent as to disturb the feeding of the electrons (e) into the substrate 1 between the region 6 and the substrate 1. Accordingly, the electrons (e) and the holes (h) generated by alpha-ray remain in the regions 5, 6, recombined and erased soon. Thus, the variation in the charge of a capacity element is eliminated to reduce software errors. |
