SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A Schottky barrier diode is provided with an epitaxially grown layer, which is formed on a substrate and has a mesa section, and a Schottky electrode formed on the mesa section. A distance between an end section of the Schottky electrode and an upper surface end section of the mesa section is 2µm or shorter. With a distance (x) of 2µm or shorter, the Schottky barrier diode having a remarkably reduced leak current, an improved breakdown voltage and excellent withstand voltage characteristics is provided.