| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising an electrode whose contact resistance is reduced even if either of electrons or positive holes is the carrier, and its manufacturing method. SOLUTION: The semiconductor device comprises an n-type diffusion layer 102 and a p-type diffusion layer 104 on a semiconductor substrate 100. It also comprises first metal wiring 108 and second metal wiring 110 formed through an insulating layer 106 and the n-type diffusion layer 102 and the p-type diffusion layer 104, a first contact electrode 112 for electrically contacting the n-type diffusion layer 102 to the first metal wiring 108, and a second contact electrode 113 for electrically contacting the p-type diffusion layer 104 to the second metal wiring 110. A part jointed to the n-type diffusion layer 102 of the first contact electrode 112 and the part jointed to the p-type diffusion layer 104 of the second contact electrode 113 are formed of a first metal-contained conductor 114 and a second metal-contained conductor 116 which contains rare earth metals. COPYRIGHT: (C)2009,JPO&INPIT |
