| 摘要 |
A method for forming a polycide gate of a semiconductor device is provided to prevent a lifting of a hard mask and a damage of a gate stack by cleaning a surface of a cobalt silicide to oxidize the surface of the cobalt silicide. A gate insulating layer(102) is formed on a semiconductor substrate(100). A polysilicon layer(104) and a cobalt silicide layer(106) are sequentially formed on the gate insulating layer. The surface of the cobalt silicide layer is oxidized by a cleaning process. A hard mask is formed on the cobalt silicide layer. The cobalt silicide layer and the polysilicon layer are etched by using the hard mask as an etch mask. A gate stack is then formed by etching the gate insulating layer.
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