| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a bonding quality by improving the bondability between a wire and a bump, and improving the cutting properties of the wire in a semiconductor device. <P>SOLUTION: In a wire bonding method, the wire is bent and stacked on a pad 3 of a second bonding point, to form the bump 21 having a sloped wedge 22 and a first bent wire projected portion 25, then the wire 12 is looped from a lead of a first bonding point toward the bump 21 and is pressed onto the sloped wedge 22 of the bump 21 by a face portion 33 of an end of a capillary to bond the wire 12 to the bump 21; and the wire 12 is pressed onto the first bent wire projected portion 25, by using an inner chamfer 31 to form a wire crushed portion 20 of a bow-shaped cross section, and the wire 12 is pulled up and cut at the wire-crushed portion 20. <P>COPYRIGHT: (C)2009,JPO&INPIT |
