| 摘要 |
PROBLEM TO BE SOLVED: To avoid variation in the local thickness of a wafer. SOLUTION: Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory by a rolling device, wherein the wafers are machined in material removal form between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding, and the form of the working area of at least one disk is altered mechanically or thermally according to measured geometry of the working gap, such that the gap has a predetermined form. COPYRIGHT: (C)2009,JPO&INPIT
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