| 摘要 |
A method for making thin semiconductor devices is disclosed. Starting from wafer with pre-fabricated front-side devices, the method includes: Thinning wafer central portion from its back-side to produce a thin region while preserving original wafer thickness in the wafer periphery for structural strength. Forming ohmic contact at wafer back-side. Separating and collecting pre-fabricated devices. This further includes: Releasably bonding wafer back-side onto single-sided dicing tape, in turn supported by a dicing frame. Providing a backing plate to match the thinned out wafer central portion. Sandwiching the dicing tape between wafer and backing plate then pressing the dicing tape to bond with the wafer. With a step-profiled chuck to support wafer back-side, the pre-fabricated devices are separated from each other and from the wafer periphery in one dicing operation with dicing depth slightly thicker than the wafer central portion. The separated thin semiconductor devices are then picked up and collected.
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