| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents cracks in a lower insulating film of a pad electrode from generating due to stress on the pad electrode during bonding in a semiconductor process or probing on inspection. SOLUTION: The semiconductor device comprises a first insulating film, a first metal pattern, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed within the second insulating film, connecting the first and second metal patterns. The third metal pattern is a single continuous structure having a network form. A first interconnection electrically insulated from the first metal pattern through the first insulating film is formed under the first metal pattern, and there is a difference of potentials between the first metal pattern and the first interconnection. COPYRIGHT: (C)2009,JPO&INPIT
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