| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing having a satisfactory polishing speed for a polysilicon film, a silicon nitride film, and a silicon dioxide film, and having the identical polishing speed for respective films; and to provide a method for chemical mechanical polishing a semiconductor device using it. <P>SOLUTION: The aqueous dispersing element for the chemical mechanical polishing related to this invention includes 0.1 to 4 mass% coloidal silica having an average particle size of 10 nm to 100 nm (A), and 0.1 to 3 mass% at least one type selected from monoammonium phosphate, diammonium phosphate, ammonium hydrogen sulfate (B). The mass ratio (A)/(B) of the (A) component and the (B) component is 1 to 3, and a pH is 4 to 5. The surface to be polished formed by not less than two types selected from the polysilicon film, silicon nitride film, and the silicon oxide film can be simultaneously polished. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
