发明名称 TRANSISTOR CIRCUIT FORMATION SUBSTRATE AND METHOD OF MANUFACTURING TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To solve the problems of a barrier towards efficient circuit development and testing caused by a specially designed mask controlling the arrangement of conductive materials that form the source and the drain of a transistor, and wherein designing the mask can possibly be costly and time-consuming, which means that the testing of a circuit involving a transistor can also be costly and time-consuming. SOLUTION: The present invention provides a general-purpose pattern comprising a large number of aligned conductive islands. The pattern is used as a source and a drain terminal for the formation of a thin-film transistor and as a conductive source for the formation of other electronic components on a large number of conductive islands aligned. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008235884(A) 申请公布日期 2008.10.02
申请号 JP20080054453 申请日期 2008.03.05
申请人 SEIKO EPSON CORP 发明人 TAM SIMON
分类号 H01L29/786;H01L21/28;H01L21/3205;H01L21/336;H01L23/52;H01L29/41 主分类号 H01L29/786
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