THIN FILM INFRARED DETECTING ELEMENT, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an infrared detecting element of excellent crystallinity, by forming an orientation-controlled thin film on a single thin film. SOLUTION: Gamma-Al2O3thin film 6 is formed to be orientation-controlled on an upper face of a silicon substrate 4. A lower platinum film 8 is formed to be orientation-controlled on an upper face of the gamma-Al2O3thin film 6. A PZT film 10 is formed to be orientation-controlled on an upper face of the lower platinum film 8. An upper platinum film 12 is formed on an upper face of the PZT film 10. COPYRIGHT: (C)2009,JPO&INPIT