SEMICONDUCTOR DEVICE MANUFACTURED USING AN IMPROVED PLASMA ETCH PROCESS FOR A FULLY SILICIDED GATE FLOW PROCESS

摘要

In one aspect, there us provided a method of manufacturing a semiconductor device (200) that comprises placing an oxide layer (310) over a gate electrode (320) and sidewall spacers located adjacent thereto, placing a protective layer (410) over the oxide layer, conducting a plasma etch to remove portions of the protective layer and the first oxide layer that are located over the gate electrode and expose a surface of the gate electrode, wherein the plasma etch is selective to polysilicon. A soft etch (725) is conducted subsequent to the plasma etch. The soft etch includes an inorganic-based fluorine containing gas and an inert gas, wherein the plasma etch leaves a film on the gate electrode that inhibits silicidation of the gate electrode and wherein the soft etch removes the film. The gate electrode is suicided with a metal subsequent to conducting the soft etch.