| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a leak current occurs in a MOS transistor which usually is an off condition by a miniaturization of manufacturing process and a decline of threshold voltage, and there is a case where leakage currents of an N channel MOS transistor and a P channel transistor is not necessary equal depending on the manufacturing process, and possibility of causing to product a problem in an operation by a circuit structure like an oscillation circuit. SOLUTION: The semiconductor device is provided with a protection circuit having a first transistor in which a driving force changes by control voltage, a motor circuit having the same circuit structure of the protection circuit, and a control voltage generation circuit which generates the control voltage based on comparison results with reference voltage. COPYRIGHT: (C)2009,JPO&INPIT |
