| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of pattern defects due to focus deviation in an exposure process of photo etching by suppressing the global thickness variation of a substrate in manufacturing processes. SOLUTION: In this method of manufacturing a semiconductor device, a substrate 10 having an interconnection portion 11 and a light-receiving element portion 12 is used. In a process 1, a wiring pattern 14-1a is formed on the interconnection portion 11. In a process 2, a film to be polished 20-1 is stacked. In a process 3, the deposited film 20-1 is planarized by CMP. In a process 4, a plurality of holes are formed on the wiring pattern 14-1a in the planarized surfaces to be polished 20-1a and 20-1b, and these holes are filled with a conductor 22-1. By repeating the processes 1 to 4 n times, an n-layer interconnection is formed. In the xth repetition (1≤x≤n), a dummy pattern (for example, metal pattern) 23 for covering the whole surface of a light-receiving element 13 is formed. Thereafter, the metal pattern 23 is removed by etching to expose the light-receiving element 13. COPYRIGHT: (C)2009,JPO&INPIT
|
